Barrier engineering for HgCdTe unipolar detectors on alternative substrates
Delta-doped layers together with compositionally grading have been utilized to get nBn
configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave …
configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave …
Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar Heterojunction
Constructing a unipolar heterojunction is an effective energy band engineering strategy to
improve the performance of photoelectric devices, which could suppress dark current and …
improve the performance of photoelectric devices, which could suppress dark current and …
Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches
M Shaveisi, P Aliparast - Frontiers of Optoelectronics, 2023 - Springer
We report a new nBn photodetector (nBn-PD) design based on the InAlSb/AlSb/InAlSb/
InAsSb material systems for mid-wavelength infrared (MWIR) applications. In this structure …
InAsSb material systems for mid-wavelength infrared (MWIR) applications. In this structure …
Delta doping in HgCdTe-based unipolar barrier photodetectors
ND Akhavan, GA Umana-Membreno… - … on Electron Devices, 2018 - ieeexplore.ieee.org
A method is described whereby the valence band (VB) discontinuitythat is present in
mercury cadmium telluride (HgCdTe)-based alloy-barrier nBn detectors can be minimized. It …
mercury cadmium telluride (HgCdTe)-based alloy-barrier nBn detectors can be minimized. It …
Active Surface Passivation for mesa type short-wave infrared InGaAs Photodetectors
N Işık, S Kocaman - Infrared Physics & Technology, 2024 - Elsevier
We propose a gate-controlled device structure for mesa-type infrared photon detectors with
the means of improving surface conditions. Additional terminal added to the pn-junction …
the means of improving surface conditions. Additional terminal added to the pn-junction …
SWIR nightglow radiation detection around room temperature with depletion-engineered HgCdTe on alternative substrates
Night vision applications utilize the reflected nightglow radiation in the short-wavelength
infrared (SWIR) atmospheric window. Nevertheless, the low light intensity values require …
infrared (SWIR) atmospheric window. Nevertheless, the low light intensity values require …
Theoretical design of uncooled mid-infrared PbSe P+ pBn+ barrier detectors
L Su, Y Liu, H Zhang, Y Yang, J Qiu - Journal of Physics D …, 2024 - iopscience.iop.org
A novel uncooled mid-wavelength infrared (MWIR) P+ pBn+ barrier detector based on
epitaxial PbSe absorber layer on Ge substrate is theoretically investigated by finite element …
epitaxial PbSe absorber layer on Ge substrate is theoretically investigated by finite element …
Extended Short-Wave Infrared Barrier Structure Focal Plane Array Based on InGaAs/GaAsSb Type-II Superlattices
R Xie, Y Shan, Y Liang, L Yao, X Su… - Journal of Lightwave …, 2024 - ieeexplore.ieee.org
We present a extend short-wave infrared photodetector featuring a p-doped InGaAs/GaAsSb
type-II superlattices (T2SL) absorber encapsulated by a pair of electron-blocking and hole …
type-II superlattices (T2SL) absorber encapsulated by a pair of electron-blocking and hole …
A dual-band HgCdTe nBn infrared detector design
Low dark current and/or high operating temperature are the main motivations behind the
nBn detector structures where removing the valence band discontinuity is usually an …
nBn detector structures where removing the valence band discontinuity is usually an …
Low dark current designs for mesa type SWIR photodetectors
Extremely low level dark current values are required for SWIR detection during the night
when there is no active illumination due to weak sources and the lack of self emission …
when there is no active illumination due to weak sources and the lack of self emission …