Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …

The relentless scaling of semiconductor devices pushes the doping level far above the
equilibrium solubility, yet the doped material must be sufficiently stable for subsequent …

Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon
after nonmelt laser annealing at 1150 C and isochronal rapid thermal postannealing are …

The challenge of achieving maximal dopant activation with minimal diffusion has re-
awakened interest in millisecond-duration annealing processes, almost two decades after …

Millisecond annealing as an equipment technology provides temperature profiles which
favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow …

The interactions between the defects and the implanted dopants are at the origin of the
diffusion and activation anomalies that are among the major obstacles to the realisation of …

Hole mobility degradation has been studied in high-dose boron-implanted ultrashallow
junctions containing high concentrations of boron-interstitial clusters (BICs), combining an …

It has been shown that many of the phenomena related to the formation of “tails” in the low-
concentration region of ion-implanted impurity distribution are due to the anomalous …

Millisecond annealing techniques with flash lamps or lasers have become increasingly
common for activating dopants and eliminating implantation-induced damage after ion …

The required temperature in semiconductor process technology is going in two extreme
directions. Either very high temperatures (up to 1300 C) with very short durations on the …