This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …
R En-nadir, H El Ghazi, MABM Kabatas, M Tihtih… - Physica E: Low …, 2024 - Elsevier
Defects and impurities within semiconductor materials pose significant challenges. This investigation scrutinizes the response of a single dopant donor impurity located in …
B Bhakti, M Ghosh - Physica B: Condensed Matter, 2025 - Elsevier
In this work the intradopant transition energy (IDTE) and the normalized intradopant transition energy (NIDTE) of GaAs quantum dot (QD) have been minutely explored. The QD …
B Bhakti, M Ghosh - physica status solidi (b) - Wiley Online Library
In the present study, the impurity binding energy (IBE) and the normalized IBE (NIBE) of GaAs quantum dot (QD) are meticulously scrutinized. The QD contains Gaussian impurity as …