Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

G Freeman, P Chang, ER Engbrecht… - IBM Journal of …, 2015 - ieeexplore.ieee.org
IBM's high-performance 22-nm silicon-on-insulator (SOI) technology is the enabling physical
foundation of IBM POWER8™ processors. This paper describes, for the first time in detail …

Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM

M Kamon, M Akbulut, Y Yan, D Faken… - Alternative …, 2016 - spiedigitallibrary.org
For Directed Self-Assembly (DSA) to be deployed in advanced semiconductor technologies,
it must reliably integrate into a full process flow. We present a methodology for using virtual …

A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow

WF Clark, A Juncker, E Paladugu… - … on Simulation of …, 2016 - ieeexplore.ieee.org
Process simulations provide vital insights to identify the key process steps to dedicate wafer
resources for improvement or to determine investment on tool capability. We considered this …

Investigations on contact punch-through in 28 nm FDSOI through virtual fabrication

B Vianne, P Morin, C Beylier… - 2017 IEEE SOI-3D …, 2017 - ieeexplore.ieee.org
The ultra-thin body-bias (UTBB) and fully-depleted silicon on insulator (FDSOI) 28nm
technology offers the capability of extreme low power performance, in part because of the …

Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory

M Kamon, M Akbulut, Y Yan, D Faken… - Journal of Micro …, 2016 - spiedigitallibrary.org
For directed self-assembly (DSA) to be deployed in advanced semiconductor technologies,
it must reliably integrate into a full process flow. We present a methodology for using virtual …