Treatment with ammonium sulfide ((NH4) 2Sx) solutions is used to produce model
passivated InAs (001) surfaces with well-defined chemical and electronic properties. The …

The existence of large densities of surface states on InAs pins the surface Fermi level above
the conduction band and also degrades the electron mobility in thin films and nanowires …

In a variety of applications where the electronic and optical characteristics of traditional,
siliconbased materials are inadequate, recently researchers have employed …

We report the first photoluminescence (PL) characterization of InAs nanowires (NWs). The
InAs NWs were grown on GaAs (111) B and Si (111) substrates using the Au-assisted …

The initial quality and stability in air of InAs (001) surfaces passivated by a weakly‐basic
solution of thioacetamide (CH3CSNH2) is examined by XPS. The S‐passivated InAs (001) …

We describe the deposition and properties of self-assembled monolayers (SAMs) of methyl-
terminated alkanethiols on InAs (001) surface. For these model hydrophobic films, we used …

We describe the passivation of InAs (001) surfaces with thioacetamide (⁠ CH 3 CSNH 2 or
TAM) as an alternative to the standard sulfur passivation using inorganic sulfide (NH 4) 2 S …

The effects of in situ sulphur passivation on the electronic properties of n-type InAs (001)
have been studied using X-ray photoemission spectroscopy and high resolution electron …

We have systematically studied the atomistic growth processes of monolayer MoSe2 on
GaAs (111) A and (111) B substrates. A combination of complementary techniques of …

We investigated the stable atomic configurations and surface reconstructions of InAs (111) B
surface by first-principles calculations. We considered three kinds of surface reconstructions …