Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

The rapid development of emerging technologies observed in recent years, such as artificial
intelligence, machine learning, mobile internet, big data, cloud computing, and the Internet …

Monolithic integration of efficient III–V light-emitting sources on planar on-axis Si (001) has
been recognized as an enabling technology for realizing Si-based photonic integrated …

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers
directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs …

High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated
for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers …

Investigation of high-performance lasers monolithically grown on silicon (Si) could promote
the development of silicon photonics in regimes other than the 1.3-1.5 µm band. 980 nm …

Silicon-based photodetectors as the main force in visible and near-infrared detection
devices have been deeply embedded in modern technology and human society, but due to …

Quantum information science has garnered significant attention due to its potential in solving
problems that are beyond the capabilities of classical computations based on integrated …

The paper presents the results of the application of MOCVD growth technique for formation
of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed …

In this work, we present an approach to modelling III-V lasers on silicon based on a
travelling-wave rate equation model with sub-micrometer resolution. By allowing spatially …