Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
H Kim - SN Applied Sciences, 2022 - Springer
Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
A Comparative Study on the Electrical Properties of Vertical ( ) and (010) -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates
This paper reports a comprehensive study on the anisotropic electrical properties of vertical
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
Giant UV photoresponse of GaN-based photodetectors by surface modification using phenol-functionalized porphyrin organic molecules
Organic molecular monolayers (MoLs) have been used for improving the performance of
various electronic device structures. In this work, the concept of organic molecular surface …
various electronic device structures. In this work, the concept of organic molecular surface …
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …
attention over the last decade, which poses great advantages to complex device integration …
GaN Surface Passivation by MoS2 Coating
D Chen, J Jiang, TFK Weatherley, JF Carlin… - Nano Letters, 2024 - ACS Publications
In this study, we investigate the impact of two-dimensional MoS2 coating on the optical
properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW …
properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW …
[HTML][HTML] Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN
A theoretical framework that provides a quantitative relationship between point defect
formation energies and growth process parameters is presented. It enables systematic point …
formation energies and growth process parameters is presented. It enables systematic point …
[HTML][HTML] High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
We demonstrate Si-implanted AlN with high conductivity (> 1 Ω− 1 cm− 1) and high carrier
concentration (5× 10 18 cm− 3). This was enabled by Si implantation into AlN with a low …
concentration (5× 10 18 cm− 3). This was enabled by Si implantation into AlN with a low …
Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …
emitting diodes, which are needed for future micro-display technologies. Introducing a …
Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance
A direct wide bandgap of 6.2 eV, high temperature robustness, and radiation hardness make
aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection …
aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection …