Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot
M Gülnahar, H Efeoğlu - Solid-state electronics, 2009 - Elsevier
The current–voltage (I–V) characteristics of Au/p-GaTe Schottky contact were characterized
at 60–300K temperature range and compared with those of Al/p-GaTe. The observed …
at 60–300K temperature range and compared with those of Al/p-GaTe. The observed …
Bi-doped GaTe single crystals: Growth and thermoelectric properties
Here bismuth (Bi) was utilized to substitute Te sites to increase the hole concentration,
thereby enhancing the thermoelectric performance of GaTe. Bi-doped GaTe single crystals …
thereby enhancing the thermoelectric performance of GaTe. Bi-doped GaTe single crystals …
Current-and capacitance-voltage characteristics of Cd/p-GaTe Schottky barrier diodes under hydrostatic pressure
Schottky barrier diodes (SBDs) on p-type GaTe have been fabricated by Cd metallization
and characterized by current–voltage (I–V) and capacitance–voltage (C–V) techniques as a …
and characterized by current–voltage (I–V) and capacitance–voltage (C–V) techniques as a …
On the studies of capacitance-voltage-temperature and deep level characteristics of an Au/p-GaTe Schottky diode
M Gülnahar, H Efeoğlu, M Şahin - Journal of Alloys and Compounds, 2017 - Elsevier
This paper deals with the capacitive properties of an unintentionally doped Au/p-GaTe/In
Schottky junction. The capacitance-voltage (CV) measurements are realized at 120–300 K …
Schottky junction. The capacitance-voltage (CV) measurements are realized at 120–300 K …
Theoretical studies of defect states in GaTe
Using first principle electronic structure calculations within density functional theory and the
supercell model, we have investigated the nature and formation energies of defect states …
supercell model, we have investigated the nature and formation energies of defect states …
Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering
M Gülnahar, H Efeoğlu - Journal of alloys and compounds, 2011 - Elsevier
A Molybdenum Schottky diode on unintentially doped p-GaTe was fabricated using DC
sputtering. I–V characteristics of the fabricated diode were measured as a function of …
sputtering. I–V characteristics of the fabricated diode were measured as a function of …
Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range
B Abay - Journal of alloys and compounds, 2010 - Elsevier
The temperature dependent barrier characteristics of Ag/p-GaSe Schottky barrier diodes
have been analyzed in the temperature range of 70–350K based on thermionic emission …
have been analyzed in the temperature range of 70–350K based on thermionic emission …
Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation
We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate
and investigated their structural and electrical properties. The electrical characteristics of the …
and investigated their structural and electrical properties. The electrical characteristics of the …
Thermal creation of defects in GaTe
A Zubiaga, JA Garcia, F Plazaola… - Japanese journal of …, 2008 - iopscience.iop.org
Photoluminescence spectra of as-grown and annealed GaTe single crystals in the 0.7–1.8
eV range have been analyzed at different temperatures. Annealing up to 200 C produces an …
eV range have been analyzed at different temperatures. Annealing up to 200 C produces an …
Effect of Annealing on Structure and Optical Properties of GaTe Thin Films
MM El-Nahass, MH Ali - journals.ekb.eg
GaTe thin films were deposited by thermal evaporation technique. The effect of annealing on
the structure and optical properties was studied. X-ray diffraction of the as deposited films …
the structure and optical properties was studied. X-ray diffraction of the as deposited films …