US10916540B2 - Device including PCM RF switch integrated with group III-V semiconductors
- Google Patents US10916540B2 - Device including PCM RF switch integrated with group …

A structure includes an active device over an area of a substrate, and a heat spreading
isolation structure adjacent the active device. The isolation structure includes a dielectric …

In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired
frequency and an undesired frequency being provided by an amplifier of the RF module are …

A high-yield, tunable radio frequency (RF) filter includes a plurality of process-dependent
capacitors and a plurality of non-volatile RF switches. Each of the plurality of process …

A radio frequency (RF) switch includes a phase-change material (PCM) and a heating
element underlying an active segment of the PCM, the PCM and heating element being …

A radio frequency (RF) switch includes a phase-change material (PCM) and a heating
element underlying an active segment of the PCM, the PCM and heating element being …

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating
element, underlying an active segment of the PCM and extending outward and transverse to …

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating
element, underlying an active segment of the PCM and extending outward and transverse to …

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating
element, underlying an active segment of the PCM and extending outward and transverse to …

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating
element, underlying an active segment of the PCM and extending outward and transverse to …