Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

TiO 2 films were deposited by ALD on Si and glass substrates. FTIR analysis reveals an
incomplete process for deposition temperatures below 160° C. The transition from the …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

The ever-shrinking dimensions of dynamic random access memory (DRAM) require a high
quality dielectric film for capacitors with a sufficiently high growth-per-cycle (GPC) by atomic …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …

During the past decade, atomic layer deposition (ALD) has become an important thin-film
deposition method in microelectronics industry, and it has also gained a lot of interest in …

In this review, key aspects of the surface chemistry associated with atomic layer deposition
(ALD) are discussed. It is argued that, in spite of its central role in defining the efficacy of …

Atomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been investigated
using titanium isopropoxide (TTIP) and tetrakis (dimethylamino) titanium (TDMAT) in …