The discovery of strong luminescence at room temperature from silicon cluster has attracted
an enormous attention in recent years due to its potential applications in Si-based …

This paper reviews half a century of research on radiation-induced point defects in pure and
doped glassy silica and its crystalline polymorph α quartz, placing emphasis on trapped …

An insight into the present understanding of point defects in the simplest and the most
radiation‐resistant oxide glass, glassy silicon dioxide (silica) is presented. The defects and …

The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon
dioxide layers were investigated. It was found, that these layers exhibit strong …

The optical properties of point defects are frequently the most important parameter in
applications of glassy silica. They are relatively easy to measure on standard …

We briefly review some of the approaches which have been used to study the distributions of
defect properties in amorphous silica and focus mainly on the implementation of the …

Thermally grown SiO2 layers of thickness d= 500 nm have been implanted by Ge+, Si+, and
O+ ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of …

We have calculated the distributions of structural parameters, formation energies, and defect
levels of neutral oxygen vacancies (NOV) in amorphous silica (a-Si O 2). All oxygen sites in …

Ion beam induced luminescence from silica glasses containing various OH concentrations
was measured to examine the effects of OH and the energy deposition processes on the …

Photosensitivity of SiO2–Al and SiO2–Na glass samples was probed by means of the
induced optical absorption and luminescence as well as by electron spin-resonance (ESR) …