A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity doping. In this review article, we discuss the key results in the field of semiconductor …

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …

A complete study based on advanced atomic force microscopy electrical mode called
scanning spreading resistance microscopy (SSRM) is carried out on a series of samples of …

A versatile, low-cost and easily scalable synthesis method is presented for producing silicon
nanowires (SiNWs) as a pure powder. It applies air-stable diphenylsilane as a Si source and …

We introduce a new class of spin-on dopants composed of organic, dopant-containing
polymers. These new dopants offer a hybrid between conventional inorganic spin-on …

We report the use of infrared (IR) scattering-type scanning near-field optical microscopy (s-
SNOM) as a nondestructive method to map free-carriers in axially modulation-doped silicon …

Achieving the required control of dopant distribution and selectivity for nanostructured
semiconducting building block is a key issue for a large variety of applications. A promising …

We have grown various samples of Si and SiGe nanowires (NWs), either by a classical
vapor–liquid–solid (VLS) process or by chemical etching, to measure their thermal …

The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were
investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs …

Appropriately controlling the properties of the Si shell in Ge/Si core/shell nanowires permits
not only passivation of the Ge surface states, but also introduces new interface phenomena …