Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
Aging mechanisms and accelerated lifetime tests for SiC MOSFETs: An overview
Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …
Short-Circuit Characterization and Protection of 10-kV SiC mosfet
This paper presents the characterization of the temperature-dependent short-circuit
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
Improved double pulse test for accurate dynamic characterization of medium voltage SiC devices
This article presents an improved double pulse test (DPT) for accurate dynamic
characterization of the medium voltage (MV) silicon carbide device. The difference between …
characterization of the medium voltage (MV) silicon carbide device. The difference between …
Performance of parallel connected sic mosfets under short circuits conditions
This paper investigates the impact of parameter variation between parallel connected SiC
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …
A survey on recent advances of medium voltage silicon carbide power devices
B Hu, X Lyu, D Xing, D Ma, J Brothers… - 2018 IEEE Energy …, 2018 - ieeexplore.ieee.org
Medium voltage (MV) Silicon Carbide (SiC) power devices have become available as
engineering samples. Recent studies show that they outperform their Silicon (Si) …
engineering samples. Recent studies show that they outperform their Silicon (Si) …
Review of methodologies for evaluating short-circuit robustness and reliability of SiC power MOSFETs
To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
Design of a fan-out panel-level SiC MOSFET power module using ant colony optimization-back propagation neural network
A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor
(MOSFET) power module was developed by using the fan-out and embedded chip …
(MOSFET) power module was developed by using the fan-out and embedded chip …
Genetic Algorithm–Assisted Design of Redistribution Layer Vias for a Fan-Out Panel-Level SiC MOSFET Power Module Packaging
J Fan, Y Qian, W Chen, J Jiang, Z Tang… - 2022 IEEE 72nd …, 2022 - ieeexplore.ieee.org
A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via
interconnection reduces the size, thermal resistance, and parasitic inductance of power …
interconnection reduces the size, thermal resistance, and parasitic inductance of power …
A temperature-dependent analytical model of SiC MOSFET short-circuit behavior considering parasitic parameters
P Xiang, R Hao, X You - … of Emerging and Selected Topics in …, 2021 - ieeexplore.ieee.org
The superior electrical and thermal characteristics of silicon carbide (SiC) MOSFETs bring
major challenges to its short-circuit reliability. To fully understand its short-circuit mechanism …
major challenges to its short-circuit reliability. To fully understand its short-circuit mechanism …