The effect of two strategic approaches, such as modification of active layer geometry and
control of active channel composition, were investigated to improve the on/off ratio …

A new pixel structure for the realization of a 1‐μm‐pixel‐pitch display was developed. This
structure, named vertically stacked thin‐film transistor (VST), was based on the conventional …

We systematically investigated the mechanism of subtractive contact patterning (SCP) and
demonstrated high-resolution organic light-emitting diodes (OLEDs) using this SCP process …

Oxide TFT backplane with 1μm channel length was developed for the application to
electronic holographic display. Spatial light modulator (SLM) panel with 3μm pixel pitch was …

Solution-processed organic light-emitting diodes (S-OLEDs) are potential candidates for
next-generation wearable electronics due to the simple processing capability, high …

In this letter, high-performance back-channel etch type oxide thin-film transistors (TFTs) with
very narrow channel length, 1 μm, are presented. To cover the steep slope at the dry-etched …

Bottom-gate thin-film transistors (TFTs) are currently fabricated using either a three-mask
back-channel-etched (BCE) or, with an additional mask for the definition of an etch-stop (ES) …

A spatial light modulator (SLM) is the key component for a digital holographic display
system. It requires both ultrahigh-resolution fine pixel integration and large-area panel to get …

We report a simple and cost-effective method of producing high-resolution line patterns of a
solution-processed organic light-emitting diode (S-OLED) in the bank structures through the …

Down-scaling of the channel length of a fully solution-processed oxide thin-film transistor
(TFT) to the nanometer-scale is the key to accessing next-generation devices for Internet-of …