Characterization of a-SiCx: H thin films as an encapsulation material for integrated silicon based neural interface devices

JM Hsu, P Tathireddy, L Rieth, AR Normann… - Thin solid films, 2007 - Elsevier
A fully integrated, wireless neural interface device is being developed to free patients from
the restriction and risk of infection associated with a transcutaneous wired connection. This …

Amorphous silicon carbide for photovoltaic applications

S Janz - 2006 - kops.uni-konstanz.de
Within this work amorphous SiC is investigated for its applicability in photovoltaic devices.
The temperature stability and dopability of SiC makes this material very attractive for …

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

L Wang, S Dimitrijev, J Han, F Iacopi, J Zou - Journal of crystal growth, 2009 - Elsevier
This paper presents a study of the transition between amorphous and crystalline phases of
SiC films deposited on Si (100) substrate using H3SiCH3 as a single precursor by a …

Comparative study of hydrogen and argon dilution effects in amorphous SiC thin films deposited by plasma enhanced chemical vapor deposition

T Zhao, Y Qin, B Wang, JF Yang - Journal of Nanoscience and …, 2015 - ingentaconnect.com
Amorphous SiC thin films were deposited from a mixture of silane and methane gas with the
separate hydrogen and Argon dilution by using the plasma enhanced chemical vapor …

[PDF][PDF] Влияние условий осаждения на состав и структуру пленок карбида кремния

VA Tarala - … sredy i mezhfaznye granitsy= Condensed Matter and …, 2011 - journals.vsu.ru
Исследованы пленки карбида кремния, синтезированные в реакторах с горячей и
холодной стенками методом химического осаждения из парогазовой смеси …

[图书][B] Degradación de las propiedades ópticas de películas semiconductoras amorfas de nitruro de silicio a-SiN producidas por pulverización catódica de …

KZ Sierra - 2015 - search.proquest.com
En el presente trabajo se encuentran compilados el estudio de propiedades ópticas y
vibracionales de películas delgadas amorfas de nitruro de silicio depositadas bajo …

Estudo da viabilidade de fabricação de dispositivos semicondutores baseados em filmes de carbeto de silício crescidos por PECVD.

AR Oliveira - 2006 - teses.usp.br
Neste trabalho é estudada a viabilidade de produção de dispositivos eletrônicos baseados
em filmes semicondutores de carbeto de silício estequiométrico (a-Si0, 5C0, 5: H) obtidos …

Method of manufacturing an infrared detector having a micro-cavity and a low refraction index step at an interface with a transparent cap, and associated infrared …

M Vilain, J Favier, JJ Yon, L Frey - US Patent 9,929,196, 2018 - Google Patents
US9929196B2 - Method of manufacturing an infrared detector having a micro-cavity and a low
refraction index step at an interface with a transparent cap, and associated infrared detector …

Material and mechanical characterization of PECVD deposited a-SiC:H with H2 dilution

U Adithi, S Deshpande, KN Bhat - 2014 IEEE 2nd International …, 2014 - ieeexplore.ieee.org
In this paper, we report optical and mechanical properties of low temperature plasma
enhanced chemical vapor-deposited (PECVD) amorphous hydrogenated silicon carbide (a …

[PDF][PDF] Study of n-type Amorphous Silicon Alloy as the Anode in Li-ion Batteries

S Wang, YG Garcia - 2020 - repository.tudelft.nl
In recent years, the world has witnessed a dramatic advancement in sustainable energy
development. Due to the inconsistent supply of such energy, a more efficient energy storage …