Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

We have grown AlN/gallium nitride (GaN)/AlN heterostructures by molecular beam epitaxy
(MBE) and fabricated Hall sensors. In a comparison with fabricated AlGaN/AlN/GaN Hall …

We study the unintentional H impurities in relation to the free electron properties of state-of-
the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are …

Indium nitride is one of the very few semiconductors which is known to have a
superconducting phase at temperatures of T c> 1 K. Superconductivity occurs in a window of …

We report on the growth and characterization of a niobium titanium nitride (NbTiN) film on a
Si substrate prepared by ultrahigh vacuum sputtering. We show that the superconducting …

The electronic structure of InN nanosheets doped by light elements (Be, B, C, and O) is
studied based on spin-polarized density functional theory within the generalized gradient …

We present a study on the role of dislocations and impurities for the unintentional n-type
conductivity in high-quality InN grown by molecular beam epitaxy. The dislocation densities …

A positive colossal magnetoresistance (CMR) of 160% has been observed in Tb 5 Si 2.2 Ge
1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied …

The authors have performed magnetoresistivity measurements ρ xx (B) on Ga As∕ Al Ga As
high electron mobility transistor (HEMT) structures at high temperatures T⁠. These HEMT …

We computed structural, electronic, and magnetic properties of pristine and both
intrinsic/extrinsic point defects included InN monolayer. The stability of the pristine InN …