This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …

Reviews the transport properties of electrons in semiconductor heterojunction structures, in
which the degrees of freedom for motion of the charge carriers are reduced by confining …

Data are presented on the role of the InAs/AlSb interface in determining the electron
transport in AlSb/InAs/AlSb quantum wells grown by molecular‐beam epitaxy. Because both …

Recently developed modulation-doped field-effect transistors (MODFETs) now hold the
record for high-speed logic. In this device structure only the larger bandgap (Al, Ga) As layer …

A correlation has been demonstrated between impurity trapping and the interface structure
in GaAs quantum well (QW) superlattices and single quantum well structures grown by …

A critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic
chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported …

The properties of semiconductor superlattices—solid-state structures in which there exists, in
addition to the periodic potential of the crystal lattice, a one-dimensional potential whose …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The observation of one-monolayer well size fluctuations in a superlattice is reported.
Luminescence experiments show that several exciton peaks occur, each of them …

In this letter we report the first growth of diluted magnetic semiconductor superlattices. Bright
and dark field transmission electron microscopy images confirm that the superlattices consist …