In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has
witnessed significant progress in theoretical descriptions as well as in experimentally …

Self-sustained time-dependent current oscillations under dc voltage bias have been
observed in recent experiments on n-doped semiconductor superlattices with sequential …

We present a general analysis of instabilities and oscillations of the sequential tunneling
current in superlattices, based on the current-voltage characteristic of a single barrier. Our …

An anomalous behavior of the current self-oscillation frequency is observed in the dynamic
dc voltage bands, emerging from each sawtoothlike branch of the current-voltage …

We have studied the sequential tunneling of doped weakly coupled GaAs/AlAs superlattices
(SLs), whose ground state of the X valley in AlAs layers is designed to be located between …

The capacitance (C) of a GaAs Al 0.3 Ga 0.7 As quantum well infrared photodetector (QWIP)
was measured as a function of temperature and bias voltage. Thermally generated electrons …

The capacitance-voltage (CV) characteristics of multiple-quantum-well (MQW)
semiconductor heterostructures are studied using a proposed numerical model. The MQW …

We investigate the transition from static to dynamic electric field domains (EFDs) in a doped
GaAs/AlAs superlattice (SL). We show that a transverse magnetic field and/or the …

We consider semiconductor devices that are composed of two parts: first, a small quantum
structure constituting the active region, and second, a classical environment with larger …

High-field domain formation in semiconductor structures with tight-binding GaAs/AlGaAs
superlattices has been studied using capacitance-voltage (CV) measurements …