Pulsed plasma etching for semiconductor manufacturing

DJ Economou - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Power-modulated (pulsed) plasmas have demonstrated several advantages compared to
continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching …

Dry efficient cleaning of poly-methyl-methacrylate residues from graphene with high-density H2 and H2-N2 plasmas

G Cunge, D Ferrah, C Petit-Etienne… - Journal of Applied …, 2015 - pubs.aip.org
Graphene is the first engineering electronic material, which is purely two-dimensional: it
consists of two exposed sp 2-hybridized carbon surfaces and has no bulk. Therefore …

Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation

HJ Kim, L Wen, D San Kim, KH Kim, JW Hong… - Applied Surface …, 2022 - Elsevier
The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

Dry-etching processes for high-aspect-ratio features with sub-10 nm resolution high-χ block copolymers

G Pound-Lana, P Bézard, C Petit-Etienne… - … Applied Materials & …, 2021 - ACS Publications
Directed self-assembly of block copolymers (BCP) is a very attractive technique for the
realization of functional nanostructures at high resolution. In this work, we developed full dry …

Plasma cleaning of ITER first mirrors

L Moser, L Marot, R Steiner, R Reichle, F Leipold… - Physica …, 2017 - iopscience.iop.org
Nuclear fusion is an extremely attractive option for future generations to compete with the
strong increase in energy consumption. Proper control of the fusion plasma is mandatory to …

Time-resolved ion energy distribution in pulsed inductively coupled argon plasma with/without DC bias

Z Chen, J Blakeney, M Carruth, PLG Ventzek… - Journal of Vacuum …, 2022 - pubs.aip.org
Pulsed plasmas have emerged as promising candidates as a means for precise control of
ion energy/angle dependent surface processes and surface chemistry during the plasma …

Hydrogen plasmas processing of graphene surfaces

E Despiau-Pujo, A Davydova, G Cunge… - Plasma Chemistry and …, 2016 - Springer
To assist the development of plasma processes to pattern graphene in a controlled way,
interactions between hydrogen plasma species (H, H+, H 2+) and various types of graphene …

MD simulations of low energy Clx+ ions interaction with ultrathin silicon layers for advanced etch processes

P Brichon, E Despiau-Pujo, O Joubert - Journal of Vacuum Science & …, 2014 - pubs.aip.org
Molecular dynamics simulations of low-energy (5–100 eV) Cl+ and Cl 2+ bombardment on
(100) Si surfaces are performed to investigate the impact of plasma dissociation and very …

Investigation of stochastic heating and its influence on plasma radial uniformity in biased inductively coupled Ar discharges by hybrid simulation

JW Huang, ML Zhao, YR Zhang, F Gao… - Physics of Plasmas, 2023 - pubs.aip.org
A bias power is usually applied in inductively coupled plasmas (ICP) to realize the separate
control of the plasma density and the ion energy. In this research, a two-dimensional …

Pulsed transfer etching of PS–PDMS block copolymers self-assembled in 193 nm lithography stacks

C Girardot, S Böhme, S Archambault… - … applied materials & …, 2014 - ACS Publications
This work presents the graphoepitaxy of high-χ block copolymers (BCP) in standard industry-
like lithography stacks and their transfer into the silicon substrate The process includes …