Compositional accuracy of atom probe tomography measurements in GaN: Impact of experimental parameters and multiple evaporation events
A systematic study of the biases occurring in the measurement of the composition of GaN by
Atom Probe Tomography was carried out, in which the role of surface electric field and laser …
Atom Probe Tomography was carried out, in which the role of surface electric field and laser …
[HTML][HTML] Homoepitaxy of non-polar ZnO/(Zn, Mg) O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
We have developed a method to grow and characterize the state of the art non-polar
ZnO/(Zn, Mg) O multi-quantum wells on m-plane ZnO substrates as a prerequisite for …
ZnO/(Zn, Mg) O multi-quantum wells on m-plane ZnO substrates as a prerequisite for …
Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
A Jollivet, B Hinkov, S Pirotta, H Hoang… - Applied Physics …, 2018 - pubs.aip.org
This paper reports on the demonstration of quantum cascade detectors (QCDs) based on
ZnO/ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an m-plane ZnO …
ZnO/ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an m-plane ZnO …
A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy
Laser enhanced field evaporation of surface atoms in laser-assisted Atom Probe
Tomography (APT) can simultaneously excite photoluminescence in semiconductor or …
Tomography (APT) can simultaneously excite photoluminescence in semiconductor or …
Composition metrology of ternary semiconductor alloys analyzed by atom probe tomography
E Di Russo, F Moyon, N Gogneau… - The Journal of …, 2018 - ACS Publications
Ternary semiconductor alloys based on the A y B1–y C stoichiometry are widely employed
in electronic devices, and their composition plays a key role in band gap engineering of …
in electronic devices, and their composition plays a key role in band gap engineering of …
Field-dependent measurement of GaAs composition by atom probe tomography
The composition of GaAs measured by laser-assisted atom probe tomography may be
inaccurate depending on the experimental conditions. In this work, we assess the role of the …
inaccurate depending on the experimental conditions. In this work, we assess the role of the …
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown
by metal organic chemical vapor deposition was investigated by correlating atom probe …
by metal organic chemical vapor deposition was investigated by correlating atom probe …
Tailoring the dopant distribution in ZnO: Mn nanocrystals
The synthesis of semiconductor nanocrystals with controlled doping is highly challenging, as
often a significant part of the doping ions are found segregated at nanocrystals surface, even …
often a significant part of the doping ions are found segregated at nanocrystals surface, even …
Detecting dissociation dynamics of phosphorus molecular ions by atom probe tomography
Dissociation processes involving phosphorus cations were investigated during laser-
assisted atom probe tomography of crystalline indium phosphide (InP). This technique not …
assisted atom probe tomography of crystalline indium phosphide (InP). This technique not …
Observation of Intersubband Absorption in Coupled Quantum Wells
Intersubband transitions in Zn O material systems are predicted to be promising candidates
for infrared and terahertz (THz) optoelectronic devices due to their unusual material …
for infrared and terahertz (THz) optoelectronic devices due to their unusual material …