Use of metal strip in stacked gate oxide JLTFET improves device quality and single-event-transient effect
This study represents a stacked gate oxide junctionless tunneling field effect transistor
(JLTFET) which has metal strips in gate oxide layers. The metal strips make improvement in …
(JLTFET) which has metal strips in gate oxide layers. The metal strips make improvement in …
First-principles-based quantum transport simulations of interfacial point defect effects on InAs nanowire tunnel FETs
H Lee, Y Cho, S Jeon, M Shin - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
The effects of a single point defect on InAs gate-all-around nanowire tunnel FETs (NW
TFETs) are investigated. We considered two kinds of interfacial defects, the arsenic dangling …
TFETs) are investigated. We considered two kinds of interfacial defects, the arsenic dangling …
Compact trap-assisted-tunneling model for line tunneling field-effect-transistor devices
Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold
degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in …
degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in …
A new stacked gate oxide L-shaped tunnel field effect transistor
In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is
proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …
proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
In this research, a novel dual workfunction (DWF) line tunnel field-effect transistor (LTFET) is
optimized by using high WF gate-drain underlap and low WF gate-source underlap. Through …
optimized by using high WF gate-drain underlap and low WF gate-source underlap. Through …