[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Advances in top–down and bottom–up surface nanofabrication: Techniques, applications & future prospects
This review highlights the most significant advances of the nanofabrication techniques
reported over the past decade with a particular focus on the approaches tailored towards the …
reported over the past decade with a particular focus on the approaches tailored towards the …
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
H Kim, WJ Maeng - Thin solid films, 2009 - Elsevier
Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …
increased enormously. For nanoscale devices especially, each of the layers should be as …
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
The filamentary resistance switching mechanism of a Pt∕ 40 nm Ti O 2∕ Pt capacitor
structure in voltage sweep mode was investigated. It was unambiguously found that the …
structure in voltage sweep mode was investigated. It was unambiguously found that the …
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
Authors to whom correspondence should be addressed. Electronic addresses: mario.
lanza@ uab. cat. Telephone:+ 34935868463. FAX:+ 34935812600, zyshen@ pku. edu. cn …
lanza@ uab. cat. Telephone:+ 34935868463. FAX:+ 34935812600, zyshen@ pku. edu. cn …
High speed resistive switching in Pt∕ TiO2∕ TiN film for nonvolatile memory application
C Yoshida, K Tsunoda, H Noshiro… - Applied Physics …, 2007 - pubs.aip.org
We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-
Ti O 2∕ Ti N devices for resistance memory applications. Data writing for five-level …
Ti O 2∕ Ti N devices for resistance memory applications. Data writing for five-level …
Occurrence of both unipolar memory and threshold resistance switching in a NiO film
We observed two types of reversible resistance switching (RS) effects in a NiO film: memory
RS at low temperature and threshold RS at high temperature. We were able to control the …
RS at low temperature and threshold RS at high temperature. We were able to control the …