Synthesis of diamonds and their identification

UFS D'Haenens-Johansson… - … in Mineralogy and …, 2022 - pubs.geoscienceworld.org
Since 1797, when Tennant demonstrated that diamond consists solely of elemental carbon
by comparing the volume of carbon dioxide formed by burning identical weights of charcoal …

[HTML][HTML] Single crystal diamond wafers for high power electronics

S Shikata - Diamond and Related Materials, 2016 - Elsevier
According to international energy proposal, about 25% of the total CO2 reduction should
come from “end use efficiency”. Hence, low loss power devices are an important technology …

Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls

S Ohmagari - Functional Diamond, 2023 - Taylor & Francis
Diamond single crystals have garnered significant attention due to their wide-ranging
applications, encompassing not only semiconducting films but also potential quantum …

Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

MA Pinault-Thaury, S Temgoua, R Gillet… - Applied Physics …, 2019 - pubs.aip.org
Among wide bandgap semiconductors, diamond presents physical properties particularly
suited for high performance power electronic devices. Growth and doping of chemical vapor …

Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

MA Pinault-Thaury, I Stenger, R Gillet, S Temgoua… - Carbon, 2021 - Elsevier
Abstracts A (113) diamond homoepilayer doped with phosphorus is grown. It presents high
crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm 2/Vs …

Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates

A Tallaire, J Achard, O Brinza, V Mille… - Diamond and Related …, 2013 - Elsevier
The growth of millimetre-thick diamond single crystals by plasma assisted CVD is
complicated by the formation of unepitaxial defects, particularly at the edges of the crystal …

The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

SN Demlow, R Rechenberg, T Grotjohn - Diamond and related materials, 2014 - Elsevier
The substrate growth temperature dependence of the plasma gas-phase to solid-phase
doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated …

Synthesis of thick and high-quality homoepitaxial diamond with high boron doping level: Oxygen effect

SA Bogdanov, AL Vikharev, MN Drozdov… - Diamond and Related …, 2017 - Elsevier
Heavily boron doped CVD diamond growth in oxygen-containing carbon/hydrogen gas
mixtures was investigated. The dependence of boron incorporation efficiency on the oxygen …

[PDF][PDF] Синтетический алмаз для электроники и оптики

РА Хмельницкий, НХ Талипов… - М.: Издательство …, 2017 - researchgate.net
В последние десятилетия в мире идет интенсивный поиск новых современных
материалов для электронных и полупроводниковых приборов. Особый интерес для …

Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

FM Shakhov, AM Abyzov, SV Kidalov… - Journal of Physics and …, 2017 - Elsevier
The boron-doped diamond (BDD) powder consisting of 40–100 µm particles was
synthesized at 5 GPa and 1500–1600° C from a mixture of 50 wt% graphite and 50 wt% Ni …