Switching and memory effects in chalcogenide glassy semiconductors have been known for
nearly fifty years. However, the physics of these effects remains unclear. Recent interest in …

To date, slow Set operation speed and high Reset operation power remain to be important
limitations for substituting dynamic random access memory by phase change memory. Here …

Using first-principles calculations, we identify the mechanisms that lead to the lowest energy
structures for the stable and metastable (GeTe) m (Sb 2 Te 3) n (GST) compounds, namely …

Эффекты переключения и памяти в халькогенидных стеклообразных полупроводниках
известны уже почти полвека. Однако до сегодняшнего дня физика этих эффектов …

Although phase change memory technology has developed drastically in the past two
decades, the cognition of the key switching materials still ignores an important member, the …

In this work, we employed the effective coordination concept to study the local environments
of the Ge, Sb, and Te atoms in the Ge m Sb 2 n Te m+ 3 n compounds. From our calculations …

Abstract Two‐dimensional (2D) materials have attracted extensive attention due to their
important prospects in electronics and optoelectronics. Synthesizing new 2D materials …

We demonstrate that Ge 2 Sb 2 Te 5, the material of choice in phase-change optical
recording (such as DVD-RAM), can be rendered amorphous by the application of hydrostatic …

GeTe is a rather unconventional and complex compound from a fundamental point of view
considering its very simple stoichiometry. Within this review, we first discuss the crystal …

Phase-change memory based on Ti0. 4Sb2Te3 material has one order of magnitude faster
Set speed and as low as one-fifth of the Reset energy compared with the conventional …