Co-designing electronics with microfluidics for more sustainable cooling
Thermal management is one of the main challenges for the future of electronics,,,–. With the
ever-increasing rate of data generation and communication, as well as the constant push to …
ever-increasing rate of data generation and communication, as well as the constant push to …
Semipolar (1122) AlGaN-based solar-blind ultraviolet photodetectors with fast response
Y Gao, J Yang, X Ji, R He, J Yan… - ACS Applied Materials …, 2022 - ACS Publications
The high-quality semipolar (112̅2) AlGaN epitaxial films have been obtained on m-plane
sapphire by metal–organic chemical vapor deposition. X-ray rocking curve measurements …
sapphire by metal–organic chemical vapor deposition. X-ray rocking curve measurements …
Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production
M Tautz, D Díaz Díaz - ChemistrySelect, 2018 - Wiley Online Library
Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting
diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of …
diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of …
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: Progress and prospects
Due to their non-centrosymmetric crystal orientation, wurtzite III-nitride crystals have two
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
Wake‐Up in Al1−xBxN Ferroelectric Films
The polarization wake‐up process is demonstrated here for ferroelectric switching in
epitaxial Al0. 93B0. 07N films on W coated c‐axis oriented Al2O3 (sapphire) substrates …
epitaxial Al0. 93B0. 07N films on W coated c‐axis oriented Al2O3 (sapphire) substrates …
Lateral‐polarity structure of AlGaN quantum wells: a promising approach to enhancing the ultraviolet luminescence
Aluminum‐gallium‐nitride alloys (Al x Ga1–x N, 0≤ x≤ 1) can emit light covering the
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …
Large scale fabrication of GaN nanorods template and characterization of MOCVD grown InGaN/GaN quantum wells on {101‾ 0} plane of GaN nanorods
Gallium nitride (GaN) based low-dimensional optoelectronic devices offer distinct
advantages over bulk counterparts owing to enhanced surface-to-volume ratio and better …
advantages over bulk counterparts owing to enhanced surface-to-volume ratio and better …
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted
GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an …
GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an …
Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power
radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by …
radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by …
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer
Vertical light-emitting diodes (LEDs) have many advantages such as uniform current
injection, excellent scalability of the chip size, and simple packaging process. Hitherto …
injection, excellent scalability of the chip size, and simple packaging process. Hitherto …