6,803,264 B2 10/2004 Yamazaki et al. 2007/0002084 A1 1/2007 Kimura et al.................
345,694 6,811,808 B2 11/2004 Ohshita et al. 2007/0020947 A1 1/2007 Daval et al …

An SOI substrate having an SOI layer that can be used in practical applications even when a
substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A …

(57) ABSTRACT A single crystal semiconductor Substrate and a base Substrate are
prepared; a first insulating film is formed over the single crystal semiconductor Substrate; a …

The invention relates to improvements in a method for molecularly bonding first and second
substrates together by placing them in surface to surface contact. The improvement includes …

6,271,101 6,312,797 6,335,231 6,337,288 6,372,609 6,380,046 6,388,652 6,602,761 RE38,
296 6,686,623 6,759,277 6,778, 164 6,803,264 6,818,529 6,875,633 6,908,797 6,946,365 …

G09G3/20—Control arrangements or circuits, of interest only in connection with visual
indicators other than cathode-ray tubes for presentation of an assembly of a number of …

A cap film which can prevent diffusion of hydrogen from the embrittled region and supply
hydrogen to a region between the embrittled region and the surface of the semiconductor …

A system and method for manufacturing semiconductor devices with dielectric layers having
a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a …

A photoelectric conversion device which is excellent in photoelectric conversion
characteristics is provided by effectively utilizing silicon semiconductor materials. The …

An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of
the substrate is possible and its productivity can be increased, are provided. A step (A) of …