This paper reviews the modern electric propulsion architectures and configurations for
railway traction, which are currently in practice. The development and advancement of …

The peak currents between two paralleled SiC MOSFETs could differ significantly due to the
mismatch in threshold voltages V th. The method described herein employs passive …

Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors
(IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors …

This paper proposes a double-end sourced layout for multichip SiC MOSFET power module
adopting conventional wire-bonded packaging technology. The unique design provides …

This article addresses the influence of parameters spread on transient current distribution
among parallel-connected silicon carbide (SiC) mosfets and proposes a chips classification …

Thanks to the increasing availability of silicon carbide (SiC) metal oxide semiconductor field
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …

Current sharing is a major problem for paralleling devices, which can affect the performance
and reliability of devices. In this paper, the factors leading to current unbalance in paralleling …

This paper systematically investigates the influence of device parameters spread on the
current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient …

Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for
high power applications. While, the asymmetrical parasitic parameters of the wide-used …

The development of the medium voltage wideband gap semiconductor SiC power devices
has enabled several applications. Most of these medium voltage high power applications …