Nanocrystals for silicon-based light-emitting and memory devices
Nanocrystals (NCs), representing a zero-dimensional system, are an ideal platform for
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …
Tunable Charge-Trap Memory Based on Few-Layer MoS2
Charge-trap memory with high-κ dielectric materials is considered to be a promising
candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) …
candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) …
Artificial visual perception neural system using a solution-processable MoS2-based in-memory light sensor
Optoelectronic devices are advantageous in in-memory light sensing for visual information
processing, recognition, and storage in an energy-efficient manner. Recently, in-memory …
processing, recognition, and storage in an energy-efficient manner. Recently, in-memory …
Adding a stretchable deep-trap interlayer for high-performance stretchable triboelectric nanogenerators
The main approach to enhancing the electrical output performance of triboelectric
nanogenerators (TENGs) has been focused to increase of triboelectric charge generation …
nanogenerators (TENGs) has been focused to increase of triboelectric charge generation …
Charge trap memory based on few-layer black phosphorus
Q Feng, F Yan, W Luo, K Wang - Nanoscale, 2016 - pubs.rsc.org
Atomically thin layered two-dimensional materials, including transition-metal dichalcogenide
(TMDC) and black phosphorus (BP), have been receiving much attention, because of their …
(TMDC) and black phosphorus (BP), have been receiving much attention, because of their …
Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications
HW You, WJ Cho - Applied Physics Letters, 2010 - pubs.aip.org
MHOS (metal-HfO 2–SiO 2–Si) structure capacitors were fabricated to investigate the
charge trapping properties of HfO 2 layer with various thicknesses for the applications of …
charge trapping properties of HfO 2 layer with various thicknesses for the applications of …
Thickness-Dependent Ferroelectricity in Freestanding Hf0.5Zr0.5O2 Membranes
YC Liu, BC Chen, CC Wei, SZ Ho, YD Liou… - ACS Applied …, 2024 - ACS Publications
In the recent years, ferroelectricity in Hf0. 5Zr0. 5O2 (HZO) has been intensively studied due
to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and …
to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and …
Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing
Redox-based memristive devices have shown great potential for application in
neuromorphic computing systems. However, the demands on the device characteristics …
neuromorphic computing systems. However, the demands on the device characteristics …
Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application
In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS
2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si …
2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si …
Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications
Y Zhang, YY Shao, XB Lu, M Zeng, Z Zhang… - Applied Physics …, 2014 - pubs.aip.org
In this work, we present significant charge trapping memory effects of the metal-hafnium
oxide-SiO 2-Si (MHOS) structure. The devices based on 800 C annealed HfO 2 film exhibit a …
oxide-SiO 2-Si (MHOS) structure. The devices based on 800 C annealed HfO 2 film exhibit a …