Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

High-quality Ge epilayers on Si with a low threading-dislocation density (TDD) were grown
by a one step hot wire chemical vapor deposition process at 350 C without cyclic thermal …

In the present paper, we report on the growing of thick (~ 0.2-3.0 μm) epitaxial Ge/Si (100)
layers by Hot Wire Chemical Vapor Deposition (HWCVD) at low growth temperatures (350 …

We report on growing the p-Ge: Ga/Si (0 0 1) epitaxial layers by hot wire chemical vapor
deposition using a solid Ge: Ga sublimation source of Ga. The Ge: Ga layers grown using …

The fabrication of photodetectors for the wavelength range of communications λ= 1.3–1.55
µm on the basis of Ge/Si (001) heterostructures with thick (~ 0.5 µm) Ge layers grown by the …

We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si [100]
substrates and polycrystalline template layers formed by selective nucleation and solid …

The prototype light emitting diodes (LEDs) were fabricated from the n+-Ge/p+-Si (0 0 1)
heterostructures grown by low-temperature Hot Wire Chemical Vapor Deposition. The n+-Ge …

We report on the investigation of the growth defect formation in the GeSn/Ge/Si (001)
epitaxial layers grown by hot wire chemical vapor deposition of Ge with simultaneous co …

Сообщается о создании фотодетекторов коммуникационного диапазона длин волн λ=
1. 3− 1. 55 мкм на базе гетероструктур Ge/Si (001) с толстыми (~ 0. 5 мкм) слоями Ge …

The morphological evolution of Ge layers growing on the SiO 2/Si (100) substrate by photo-
excited chemical vapor deposition was traced through an analysis of pseudodielectric …