High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide …
Metal oxide materials processed using solution methods have garnered significant attention
due to their ability to efficiently and affordably create transparent insulating layers or active …
due to their ability to efficiently and affordably create transparent insulating layers or active …
Low Cost, Al2O3 and ZrAlOx Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors
A stack passivation by spray pyrolysis is demonstrated for high performance and stable
amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The device …
amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The device …
Enhancement of electrical characteristics of SnGaO thin-film transistors via argon and oxygen plasma treatment
Y Lu, X Dai, J Yang, Y Liu, D Cao, F Lin, F Liu - Vacuum, 2024 - Elsevier
The impact of Ar or O 2 plasma treatment on the electrical characteristics of SnGaO thin film
transistors (TFTs) fabricated via solution method was examined. The findings of the study …
transistors (TFTs) fabricated via solution method was examined. The findings of the study …
Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors
C Avis, J Jang - Materials, 2023 - mdpi.com
We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin
oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The …
oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The …
Improvement of PrIZO Thin Films by O Plasma Treatment Combined With Low-Temperature Annealing for Thin-Film Transistors
W Zou, Z Liang, X Fu, H Ning, X Zeng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are of great interest
due to their high mobility, excellent homogeneity, and low processing temperature. With …
due to their high mobility, excellent homogeneity, and low processing temperature. With …
Low-Cost and High-Performance, Back-Channel Etched InGaZnO Thin Film Transistors by Spray Pyrolysis
We demonstrate the high performance, crystalline InGaZnO (c-IGZO) TFT using spray
pyrolysis by varying the substrate temperature from 375° C to 450° C. A high quality c-IGZO …
pyrolysis by varying the substrate temperature from 375° C to 450° C. A high quality c-IGZO …
Passivation of oxygen vacancy defects in conductive ZnO nanoparticles via low-temperature annealing in NF3
K Xu, P Li, S Wang, J Ma, H Xu… - Journal of Physics D …, 2023 - iopscience.iop.org
Oxygen vacancies (VO) often exist in wide-bandgap metal oxide semiconductors (MOSs) as
deep-level defects and undermine the reliability of various optoelectronic devices based on …
deep-level defects and undermine the reliability of various optoelectronic devices based on …
Highly Robust Spray‐Pyrolyzed Al2O3 Gate Insulator for Flexible a‐IGZO Thin‐Film Transistors for Low‐Power Displays
Thin‐film transistor (TFT) is a key element in flexible display technology for energy‐efficient
wearable electronics. A systematic analysis is performed to demonstrate the high‐quality …
wearable electronics. A systematic analysis is performed to demonstrate the high‐quality …