Three-dimensionally confined semiconductor quantum dots have emerged to be a versatile
material system with unique physical properties for a wide range of device applications. With …

Nanostructural engineering can achieve smart modulation of the physical and chemical
properties of nanomaterials by changing their dimensions, morphologies, and shapes …

Abstract GaAs/Al 0.30 Ga 0.70 As quantum wells (QWs) with InAs quantum dot (QD) arrays
covered by the different capping layers: Al 0.30 Ga 0.70 As or Al 0.1 Ga 0.75 In 0.15 As …

Abstract GaAs/Al 0.30 Ga 0.70 As/AlGaInAs/heterostructures grown by molecular beam
epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after …

Site-controlled quantum dots formed during the deposition of (Al) GaAs layers by metal-
organic vapor-phase epitaxy on GaAs (111) B substrates patterned with inverted pyramids …

In this work the generation of an intermediate band of energy levels from multi-shell
spherical GaAs/Al x Ga 1− x As quantum dot shells-size distribution is reported. Within the …

We present a theoretical model of the formation of self-limited (Al) GaAs quantum wires
within V-grooves on GaAs (001) substrates during metalorganic vapor-phase epitaxy. We …

The Raman scattering related with conduction band states in semiconductor pyramidal
quantum dots is theoretically investigated. The electron Raman differential cross section and …

This thesis concerns a theoretical and experimental investigation of two applications of
semiconductor nanowires and nanowire heterostructures. First, the development of …

We present experimental data and a comprehensive theoretical model for the self-limiting
growth during metalorganic vaporphase epitaxy of Al x Ga 1− x As within tetrahedral …