Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Recent developments in negative capacitance gate-all-around field effect transistors: a review
L Qin, C Li, Y Wei, G Hu, J Chen, Y Li, C Du, Z Xu… - IEEE …, 2023 - ieeexplore.ieee.org
With transistors scaling down to 3 nm node and beyond, short channel effect (SCE) as well
as power consumption dissipation present immense challenges for further scaling down of …
as power consumption dissipation present immense challenges for further scaling down of …
Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
YS Jiang, KW Huang, SH Yi, CI Wang, TJ Chang… - Journal of the European …, 2022 - Elsevier
Enhanced ferroelectric properties of nanoscale ZrO 2 thin films by an HfO 2 seed layer are
demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared …
demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared …
Analytical modeling of negative capacitance transistor based ultra low power Schmitt trigger
G Keerthi, S Semwal, A Kranti - Solid-State Electronics, 2023 - Elsevier
Through an analytical framework, the work showcases the potential benefits of Metal-
Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) negative capacitance (NC) transistor …
Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) negative capacitance (NC) transistor …
Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic …
S Semwal, A Kranti - Semiconductor Science and Technology, 2022 - iopscience.iop.org
The present reports an analytical modelling framework to provide insights into subthreshold
logic design using metal-ferroelectric-metal–insulator-semiconductor (MFMIS) negative …
logic design using metal-ferroelectric-metal–insulator-semiconductor (MFMIS) negative …
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias
RR Shaik, KP Pradhan - Semiconductor Science and Technology, 2022 - iopscience.iop.org
In this article, a variant of doped HfO 2 based ferroelectric capacitor ie silicon doped HfO 2
(hafnia-silica/HSO) is investigated for analytical feasibility and viability for negative …
(hafnia-silica/HSO) is investigated for analytical feasibility and viability for negative …
Insights into unconventional behaviour of negative capacitance transistor through a physics-based analytical model
S Semwal, A Kranti - Semiconductor Science and Technology, 2021 - iopscience.iop.org
The present work investigates key attributes of metal–ferroelectric–metal–insulator–
semiconductor (MFMIS) cylindrical nanowire (NW) transistor through a physics-based …
semiconductor (MFMIS) cylindrical nanowire (NW) transistor through a physics-based …
Investigation of temperature variation on a HSO ferroelectric FDSOI NCFET
RR Shaik, KP Pradhan - 2021 IEEE 16th Nanotechnology …, 2021 - ieeexplore.ieee.org
In this work, temperature effect on MFMIS type FDSOI NCFET is investigated considering a
well known thin film ferroelectric material HSO (Silicon doped HfO 2). The current …
well known thin film ferroelectric material HSO (Silicon doped HfO 2). The current …
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design
Through physical insights and well-calibrated simulations, this work reports on the scalability
comparison of negative capacitance (NC) junctionless (JL) and inversion mode (IM) …
comparison of negative capacitance (NC) junctionless (JL) and inversion mode (IM) …