Metal-insulator-semiconductor photodetectors
The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible,
and infrared light. Detection in these three regions is important to human beings. The metal …
and infrared light. Detection in these three regions is important to human beings. The metal …
High-selectivity NIR amorphous silicon-based plasmonic photodetector at room temperature
This study employed amorphous materials to construct a Near-Infrared (NIR) photodetector,
enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky …
enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky …
[PDF][PDF] Современное состояние и новые направления полупроводниковой ИК-фотоэлектроники (Часть 1)
МД Корнеева, ВП Пономаренко… - Прикладная …, 2011 - applphys.orion-ir.ru
Инфракрасная фотоэлектроника вместе с фотоэлектроникой видимого диапазона по-
прежнему остается одним из ключевых направлений современного оптического …
прежнему остается одним из ключевых направлений современного оптического …
Photoelectrical characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
AV Voitsekhovskii, SN Nesmelov, SM Dzyadukh - Thin Solid Films, 2014 - Elsevier
Metal–insulator–semiconductor structures based on HgCdTe are grown by molecular-beam
epitaxy. Near-surface graded-gap layers with high CdTe content are formed on both sides of …
epitaxy. Near-surface graded-gap layers with high CdTe content are formed on both sides of …
Solid state photoelectronics: the current state and new prospects
ID Burlakov, AI Dirochka, MD Korneeva… - Journal of …, 2016 - Springer
The analysis of the current state of solid photoelectronics for thermal imaging and thermal
direction-finding equipment of new generation is performed. The results of the latest …
direction-finding equipment of new generation is performed. The results of the latest …
[PDF][PDF] Пороговые характеристики инфракрасных МДП-детекторов на основе варизонного HgCdTe, выращенного методом молекулярно-лучевой эпитаксии …
При различных напряжениях и частотах экспериментально определены значения
дифференциального сопротивления области пространственного заряда для МДП …
дифференциального сопротивления области пространственного заряда для МДП …
Investigation of dielectric — Semiconductor interface in MIS structures based on p-Hg0.8Cd0.2Te
V Damnjanović, JM Elazar - 2010 27th International …, 2010 - ieeexplore.ieee.org
In this paper we describes technological processes for the stabilization of interface between
p-Hg 1-x Cd x and dielectric. Native oxide and native fluoride, as well as Al 2 O 3 and SiO 2 …
p-Hg 1-x Cd x and dielectric. Native oxide and native fluoride, as well as Al 2 O 3 and SiO 2 …