The active regions of conventional c-plane (Al, In, Ga) N optoelectronic devices suffer from
deleterious polarization effects. These polarization effects can be eliminated by growing …

Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy.
Planar films of (1013) and (1122) GaN have been grown on (1010) m-plane sapphire. The in …

(57) ABSTRACT A method of growing highly planar, fully transparent and specular m-plane
gallium nitride (GaN) films. The method provides for a significant reduction in structural …

Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy.
This is the first report of high quality semipolar GaN films that could be used for device …

(57) ABSTRACT A method of growing highly planar, fully transparent and specular m-plane
gallium nitride (GaN) films. The method provides for a significant reduction in structural …

Abstract Nonpolar (1 ̄ 100) m-plane gallium nitride has been grown heteroepitaxially on
(100) γ-LiAlO 2 by several groups. Previous attempts to grow m-plane GaN by hydride vapor …

Compared to the intense research focus on the optical properties, the transport properties in
non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date …

Thick nonpolar (1010) GaN layers were grown on m-plane sapphire substrates by hydride
vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (1013) …

Inversion domains with a V shape were found to nucleate inside a Mg-doped InN
heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity …

We study the growth and properties of m-plane InGaN/GaN structure on LiAlO2 substrate
grown by metal organic vapor phase epitaxy. Surface nitridation of LiAlO2 substrate is …