Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects
J Müller, P Polakowski, S Mueller… - ECS Journal of Solid …, 2015 - iopscience.iop.org
Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers
from limited CMOS-compatibility and faces severe scaling issues in today's and future …
from limited CMOS-compatibility and faces severe scaling issues in today's and future …
Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review
In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics
T Ali, P Polakowski, S Riedel, T Büttner… - Applied Physics …, 2018 - pubs.aip.org
The recent discovery of ferroelectricity in thin film HfO 2 materials renewed the interest in
ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high …
ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high …
Influential factors modulating the dielectric behaviour of transition metal oxide nanocomposites for energy storage applications: a-state-of-the-art review
Transition metal oxide (TMO) nanoparticles are recently proven to be the most valuable and
promising material for dielectric and energy storage applications. In this work, the peer …
promising material for dielectric and energy storage applications. In this work, the peer …
Structural, morphological, electrical and dielectric properties of Mn doped CeO2
Present study reports the structural and dielectric properties of Ce 1-x Mn x O 2 (0≤ x≤
0.15) compounds synthesized by solid state reaction method. X-ray diffraction and Raman …
0.15) compounds synthesized by solid state reaction method. X-ray diffraction and Raman …
Two-level 3D column-like nanofilms with hexagonally–packed tantalum fabricated via anodizing of Al/Nb and Al/Ta layers—A potential nano-optical biosensor
A Pligovka, A Lazavenka, U Turavets, A Hoha… - Materials, 2023 - mdpi.com
Reanodizing metal underlayers through porous anodic alumina has already been used
extensively to fabricate ordered columns of different metal oxides. Here, we present similar …
extensively to fabricate ordered columns of different metal oxides. Here, we present similar …
Dielectric relaxation of high-k oxides
Frequency dispersion of high-k dielectrics was observed and classified into two parts:
extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric …
extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric …
Harnessing HfO2 Nanoparticles for Wearable Tumor Monitoring and Sonodynamic Therapy in Advancing Cancer Care
Addressing the critical requirement for real-time monitoring of tumor progression in cancer
care, this study introduces an innovative wearable platform. This platform employs a …
care, this study introduces an innovative wearable platform. This platform employs a …