Wideband balun-LNA with simultaneous output balancing, noise-canceling and distortion-canceling
SC Blaakmeer, EAM Klumperink… - IEEE journal of solid …, 2008 - ieeexplore.ieee.org
An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard
radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate …
radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate …
[图书][B] Intermodulation distortion in microwave and wireless circuits
JC Pedro, NB Carvalho - 2002 - books.google.com
Annotation" Intermodulation Distortion in Microwave and Wireless Circuits presents the full
range of distortion specs to help practitioners select the right telecommunications equipment …
range of distortion specs to help practitioners select the right telecommunications equipment …
A fully matched N-way Doherty amplifier with optimized linearity
Y Yang, J Cha, B Shin, B Kim - IEEE Transactions on …, 2003 - ieeexplore.ieee.org
This paper presents a new fully matched N-way Doherty amplifier. The basic principles of
operation and important features are described. For the experimental verification, 2.14-GHz …
operation and important features are described. For the experimental verification, 2.14-GHz …
A comprehensive analysis of IMD behavior in RF CMOS power amplifiers
This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD)
behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small …
behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small …
Large-and small-signal IMD behavior of microwave power amplifiers
NB De Carvalho, JC Pedro - IEEE transactions on microwave …, 1999 - ieeexplore.ieee.org
In this paper, large-signal intermodulation distortion (IMD) sweet spots in microwave power
amplifiers are studied and predicted using a new mathematical basis. The variations in the …
amplifiers are studied and predicted using a new mathematical basis. The variations in the …
RF circuit implications of moderate inversion enhanced linear region in MOSFETs
B Toole, C Plett, M Cloutier - … on Circuits and Systems I: Regular …, 2004 - ieeexplore.ieee.org
The implications for radio frequency circuit design of the nonlinear behavior of a MOSFET
transistor over all regions of operation, including moderate inversion region, are …
transistor over all regions of operation, including moderate inversion region, are …
Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated.
First, an analysis is performed to explain measured IMD characteristics in different classes of …
First, an analysis is performed to explain measured IMD characteristics in different classes of …
Effect of baseband impedance on FET intermodulation
J Brinkhoff, AE Parker - IEEE Transactions on Microwave …, 2003 - ieeexplore.ieee.org
The intermodulation performance of an FET in the common-source configuration is
dependent on the impedance presented to its gate and drain terminals, not only at …
dependent on the impedance presented to its gate and drain terminals, not only at …
A highly linear Ka-band GaN-on-Si active balanced mixer for radar applications
A highly linear active mixer in Gallium Nitride on Silicon (GaN-on-Si) monolithic microwave
integrated circuit (MMIC) technology, operating in Ka-band for radar applications is …
integrated circuit (MMIC) technology, operating in Ka-band for radar applications is …
Linear power amplifier based on 3-way Doherty amplifier with predistorter
B Shin, J Cha, J Kim, YY Woo, J Yi… - 2004 IEEE MTT-S …, 2004 - ieeexplore.ieee.org
This paper presents a 3-way Doherty amplifier with predistorter (PD) for a repeater
application. It is implemented using three 60 Watts PEP silicon LDMOSFETs and tested …
application. It is implemented using three 60 Watts PEP silicon LDMOSFETs and tested …