III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the
zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that …

The optical properties of the wurtzite (WZ) GaAs crystal phase found in nanowires (NWs) are
a highly controversial topic. Here, we study high-quality pure WZ GaAs/AlGaAs core–shell …

Photoluminescence from finite semiconductor nanowires is theoretically investigated,
exploring and predicting their antenna-like properties for light emission in a variety of …

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic
devices with tunable bandgap. However, the lack of insight into the effects of the …

Future development of quantum technologies is dependent upon physical implementation of
quantum systems. Photonic platforms have gained significant attention owing to the …

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …

We report the first comprehensive experimental and theoretical study of the optical
properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum …

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport
photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based …

We conducted temperature-dependent measurements of the photoluminescence (PL)
polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite structure in order …