Near-ideal subthreshold swing in InAlN/GaN Schottky gate high electron mobility transistor using carbon-doped GaN buffer
This work presents a comparative study of the subthreshold swing (SS) in InAlN/GaN-based
high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer. It …
high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer. It …
InAlGaN/GaN HEMTs at cryogenic temperatures
E Dogmus, R Kabouche, S Lepilliet, A Linge… - Electronics, 2016 - mdpi.com
We report on the electron transport properties of two-dimensional electron gas confined in a
quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the …
quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the …
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850° C by MOVPE
C Pitaval, S Aroulanda, Y Fouzi, N Defrance… - Applied Physics …, 2024 - pubs.aip.org
Regrown Ohmic contacts have been widely studied for high millimeter-wave applications.
However, few were applied to InAl (Ga) N-based HEMT despite the lattice match benefits …
However, few were applied to InAl (Ga) N-based HEMT despite the lattice match benefits …
[PDF][PDF] Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor.
Y Gowthami, B Balaji, KS Rao - International Journal of Electrical & …, 2023 - academia.edu
Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon
nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The …
nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The …
Design and simulation of high performance lattice matched double barrier normally off AlInGaN/GaN HEMTs
A novel lattice matched double barrier Al 0.72 In 0.16 Ga 0.12 N/Al 0.18 In 0.04 Ga 0.78
N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by …
N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by …
Theoretical study of electron transport properties in GaN-based HEMTs using a deterministic multi-subband Boltzmann transport equation solver
S Cha, SM Hong - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
A high-electron mobility transistor (HEMT) with a GaN channel is simulated using a
deterministic multi-subband Boltzmann transport equation solver. A structure that includes …
deterministic multi-subband Boltzmann transport equation solver. A structure that includes …
[HTML][HTML] Numerical Study of 2DEG Carrier Density of Quaternary AlInGaN-Based T-Gate MOSHEMT Grown on UWBG-β-Ga2O3 Substrate
N Amina, T Zine-eddine, M Zitouni, S Okba… - Power Electronic Devices …, 2025 - Elsevier
This paper presents a numerical simulation study of an E-mode AlInGaN/AlN/GaN metal
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
[HTML][HTML] Enhancing the modulation depth of a dynamic terahertz metasurface by integrating into an asymmetric Fabry-Pérot cavity
The modulation capability of a terahertz dynamic metasurface was enhanced by integrating
it with an asymmetric Fabry-Pérot cavity. The dynamic metasurface consists of split ring …
it with an asymmetric Fabry-Pérot cavity. The dynamic metasurface consists of split ring …
高頻氮化鋁銦鎵/氮化鎵高電子遷移率電晶體之模擬分析與優化
劉昀皓 - 2022 - tdr.lib.ntu.edu.tw
在本篇論文中, 透過分析實驗已有的氮化鎵氮化鋁鎵之高電子遷移率電晶體的數據,
提出優化的磊晶結構及元件表現. 在分析實驗數據中, 發現元件的二維電子氣濃度與短通道效應 …
提出優化的磊晶結構及元件表現. 在分析實驗數據中, 發現元件的二維電子氣濃度與短通道效應 …
Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer
A high frequency enhancement mode quaternary InAlGaN/GaN MIS-HEMT with recessed
gate (L g= 150 nm) processed using an oxygen-based digital etching technique is …
gate (L g= 150 nm) processed using an oxygen-based digital etching technique is …