US6573030B1 - Method for depositing an amorphous carbon layer - Google Patents
US6573030B1 - Method for depositing an amorphous carbon layer - Google Patents Method for …

Methods are provided for depositing amorphous carbon materials. In one aspect, the
invention provides a method for processing a substrate including positioning the substrate in …

Single spacer processes for multiplying pitch by a factor greater than two are provided. In
one embodiment, n, where n≧ 2, tiers of stacked mandrels are formed over a substrate …

The dimensions of mask patterns, such as pitch-multiplied spacers, are controlled by
controlled growth of features in the patterns after they are formed. To form a pattern of pitch …

A method for fabricating a semiconductor device comprises patterning a layer of photoresist
material to form a plurality of mandrels. The method further comprises depositing an oxide …

Methods are disclosed, such as those involving increasing the density of isolated features in
an integrated circuit. Also disclosed are structures associated with the methods. In one or …

A method of forming an integrated circuit using an amorphous carbon film. The amorphous
carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon …

(57) ABSTRACT H566 H 1989 Nyaiesh et al.............. 427,571 A transparent amorphous
carbon layer is formed. The trans 4,849,642 A 7, 1989 Katsumi.......... 250/492.2 parent …

Pitch multiplication is performed using a two step process to deposit spacer material on
mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier …

(54) TECHNIQUES FOR THE USE OF 5.998, 100 A 12/1999 AZuma et al. AMORPHOUS
CARBON (APF) FOR 6,042,993 A 3/2000 Leuschner et al. VARIOUS ETCH AND LITHO …