Based on physical failure inspection, known physical relationships, correlation analysis and
posterior predictive distributions, a valid model for semiconductor lifetime is developed. It is …

The paper proposes a methodology for estimation of the variation of power devices lifetime
using data from different stages of development and tests. In the characterization process of …

Reliability stress testing of power semiconductors requires significant development effort for
a test apparatus to provide the required functionality. This paper presents a modular test …

Power-Cycling of DMOS-Switches Triggers Thermo-Mechanical Failure Mechanisms Page 1
Figure 1. Circuit-diagram of a low-side switch driving an inductive load. The relationship between …

In this paper Bayesian networks are used to model semiconductor lifetime data from a cyclic
stress test system. The data of interest is a mixture of log-normal distributions, representing …

Conventional reliability testing of microelectronic power devices requires dedicated test
systems. In order to test a statistically meaningful set of devices, only simplified stress pattern …

The curvature evolution of a thin film layer stack containing a top Al layer is measured during
temperature cycles with very high heating rates. The temperature cycles are generated by …

Reliability stress testing of power semiconductors requires significant development effort for
a test apparatus to provide the required functionality. This paper presents a modular test …

In this article, Bayesian networks are used to model semiconductor lifetime data obtained
from a cyclic stress test system. The data of interest are a mixture of log‐normal distributions …

Reliability prediction of semiconductor devices gains importance, since demand increases
and resources, eg time, are restricted. Normally, methods focusing on technology aspects …