Millimeter-wave communications: Physical channel models, design considerations, antenna constructions, and link-budget
IA Hemadeh, K Satyanarayana… - … Surveys & Tutorials, 2017 - ieeexplore.ieee.org
The millimeter wave (mmWave) frequency band spanning from 30 to 300 GHz constitutes a
substantial portion of the unused frequency spectrum, which is an important resource for …
substantial portion of the unused frequency spectrum, which is an important resource for …
A 30-GHz CMOS SOI outphasing power amplifier with current mode combining for high backoff efficiency and constant envelope operation
High peak and average efficiency is an important feature of power amplifiers (PAs) for 5G
millimeter-wave communication. This article reviews the challenges of conventional …
millimeter-wave communication. This article reviews the challenges of conventional …
A 60-GHz SiGe power amplifier with three-conductor transmission-line-based Wilkinson baluns and asymmetric directional couplers
Y Gong, JD Cressler - IEEE Transactions on Microwave Theory …, 2020 - ieeexplore.ieee.org
A compact, 60-GHz high-power, wideband balanced power amplifier, implemented in a 90-
nm SiGe BiCMOS technology, is demonstrated. A three-conductor transmission-line-based …
nm SiGe BiCMOS technology, is demonstrated. A three-conductor transmission-line-based …
Stacking the deck for efficiency: RF-to millimeter-wave stacked CMOS SOI power amplifiers
The emerging demand for high-capacity wireless mobile communication and the advent of
the Internet of Things and fifthgeneration communication standards have motivated the …
the Internet of Things and fifthgeneration communication standards have motivated the …
8.6-13.6 mW series-connected power amplifiers designed at 325 GHz using 130 nm InP HBT technology
We report two 325 GHz series-connected power amplifiers (PAs) using 130 nm InP HBT
technology. The unit cell, using two series-connected transistors, produces 8.6 mW at 325 …
technology. The unit cell, using two series-connected transistors, produces 8.6 mW at 325 …
InP DHBT technology for power amplifiers at mm-wave frequencies
V Midili, V Nodjiadjim, TK Johansen… - Microelectronics …, 2017 - Elsevier
Abstract An InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented
for millimeter-wave power amplifiers at E-band and higher frequencies. Single-and multi …
for millimeter-wave power amplifiers at E-band and higher frequencies. Single-and multi …
Analysis, design, and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
AB Amado-Rey - 2018 - publica.fraunhofer.de
The interest for devices operating in the millimeter-wave (mmW) range (30-300 GHz) and
submillimeter-wave (sub-mmW) range (above 300 GHz) is increasing due to the advantages …
submillimeter-wave (sub-mmW) range (above 300 GHz) is increasing due to the advantages …
Propagation models for 5G signals in the 60 GHz band
GK Marengo, ES Lima, GES Leite… - Journal of …, 2020 - jcis.emnuvens.com.br
Wireless data traffic is increasing due to the growing numbers of mobile phones and devices
connected to the network. A large number of devices needs to be interconnected so it …
connected to the network. A large number of devices needs to be interconnected so it …
High frequency MMICs for THz-applications based on InP transferred substrate technology
T Al Sawaf - 2022 - depositonce.tu-berlin.de
The increasing demand for integrated circuits in the millimeter wave frequency range drives
the semiconductor technologies towards down-scaling the active devices. The penalty of …
the semiconductor technologies towards down-scaling the active devices. The penalty of …
A 204 GHz Power Amplifier with 6.9 dBm Psat and 8.8 dB Gain in 65nm CMOS Technology
This paper presents the design of a 204GHz power amplifier fabricated in TSMC 65nm
CMOS process. The power amplifier employs 4 parallel chains of 8 gain stages with novel …
CMOS process. The power amplifier employs 4 parallel chains of 8 gain stages with novel …