State of the art of solid-state transformers: Advanced topologies, implementation issues, recent progress and improvements

MA Hannan, PJ Ker, MSH Lipu, ZH Choi… - Ieee …, 2020 - ieeexplore.ieee.org
Solid-state transformer (SST) is an emerging technology integrating with a transformer
power electronics converters and control circuitry. This paper comprehensively reviews the …

Energy storage system: Current studies on batteries and power condition system

C Zhang, YL Wei, PF Cao, MC Lin - Renewable and Sustainable Energy …, 2018 - Elsevier
To maximize the introduction of renewable energy, introducing grid energy storage systems
are essential. Electrochemical energy storage system, ie, battery system, exhibits high …

A review of SiC IGBT: models, fabrications, characteristics, and applications

L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …

Wide bandgap technologies and their implications on miniaturizing power electronic systems

HA Mantooth, MD Glover… - IEEE Journal of emerging …, 2014 - ieeexplore.ieee.org
The current state of wide bandgap device technology is reviewed and its impact on power
electronic system miniaturization for a wide variety of voltage levels is described. A synopsis …

Characterization and implementation of dual-SiC MOSFET modules for future use in traction converters

J Fabre, P Ladoux, M Piton - IEEE Transactions on Power …, 2014 - ieeexplore.ieee.org
Silicon (Si) insulated-gate bipolar transistors are widely used in railway traction converters.
In the near future, silicon carbide (SiC) technology will push the limits of switching devices in …

Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices

SMSH Rafin, R Ahmed, MA Haque, MK Hossain… - Micromachines, 2023 - mdpi.com
This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

Parasitic capacitive couplings in medium voltage power electronic systems: An overview

BF Kjærsgaard, G Liu, MR Nielsen… - … on Power Electronics, 2023 - ieeexplore.ieee.org
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

Future shipboard MVdc system protection requirements and solid-state protective device topological tradeoffs

RM Cuzner, V Singh - IEEE Journal of Emerging and Selected …, 2017 - ieeexplore.ieee.org
The search for the optimum architecture for shipboard medium voltage dc integrated power
systems must take into account the short-circuit protection in addition to overarching goals of …

Design considerations and performance evaluation of 1200-V 100-A SiC MOSFET-based two-level voltage source converter

S Hazra, S Madhusoodhanan… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFET is capable of achieving better efficiency and better power
density of power converters due to its low on-state resistance and lower switching losses …

Comparative evaluation of silicon and silicon-carbide device-based MMC and NPC converter for medium-voltage applications

S Belkhode, P Rao, A Shukla… - IEEE Journal of Emerging …, 2021 - ieeexplore.ieee.org
The neutral-point-clamped (NPC) converter and the modular multilevel converter (MMC) are
among the most popular converter topologies for medium-and high-voltage applications …