The synthesis of Group 14 nanocrystals with controlled size dispersity and composition is an
area of considerable interest due to their size-dependent optical and electronic properties …

Abstract Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …

Crystallization of microdroplets of molten alloys could, in principle, present a number of
possible morphological outcomes, depending on the symmetry of the propagating …

Since the inception of the first transistors in the 1940s, the immense body of work on the
Group IV semiconductors, Si and Ge, has spearheaded spectacular advances in modern …

Photosensitive films based on finely dispersed semiconductor nanocrystals (NCs) in
dielectric films have great potential for sensor applications. Here we report on preparation …

GeSi nanostructured films were obtained by cosputtering from two Ge and Si targets and
subsequent annealing in furnace in N2 for 5 h at 700, 800 and 900° C, with the aim to show …

We report an investigation into the formation of Si x Ge1–x alloy nanocrystals (64< x< 100)
synthesized from mixing GeI2: PR3 adducts with hydrogen silsesquioxane (HSQ). The use …

Si nanocrystals embedded in a wide bandgap material have been of interest for various
electronic devices, including third-generation solar cells with efficiency values exceeding …

The ability to manipulate the composition of semiconductor alloys on demand and at
nanometer-scale resolutions is a powerful tool that could be exploited to tune key properties …

SiGe‐SiO2‐based structures present high interest for their high photosensitivity from visible
to short‐wavelength infrared. Herein, two postdeposition annealing procedures, that is, rapid …