HfO2 can assume different crystalline structures, such as monoclinic, orthorhombic, and cubic polymorphs, each one characterized by unical properties. The peculiarities of this …
Despite the great progress of ferroelectric gated field-effect transistors (Fe-FETs) based on graphene and other 2D materials, a device model that accurately describes the hysteretic …
HfO2 shows different polymorphs, including monoclinic and orthorhombic ones, that exhibit singular properties. Moreover, the character of HfO2 is also influenced by the Zr atoms as a …
M Dragoman, A Dinescu… - physica status solidi (a), 2019 - Wiley Online Library
The paper presents the state‐of‐the art of nanoelectronic devices based on 2D materials related to the cutting edge of Moore's law. Ballistic electron devices, ferroelectric, and …
Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS 2 thin film (7 monolayers) grown on a 4-inch Al 2 O 3/high-resistivity silicon wafer via Chemical …
M Hassanpour Amiri, J Heidler, K Müllen… - Advanced Functional …, 2020 - Wiley Online Library
Conventional memory elements code information in the Boolean “0” and “1” form. Devices that exceed bistability in their resistance are useful as memory for future data storage due to …
This paper is dedicated to the study of the tunable electromagnetic properties of HfO2 doped with Zr (further referred to as HfZrO) grown on high-resistivity silicon using atomic layer …
The electronic properties of graphene on top of ferroelectric HfO2 substrates in an orthorhombic phase with space group Pca21 are investigated using density functional …
In this work, we present a metal-insulator-metal (MIM) diode, based on quantum tunnelling phenomena. Its model is based on a multilevel modelling approach consisting of atomistic …