Nanomaterials science is becoming the foundation stone of high-frequency applications.
The downscaling of electronic devices and components allows shrinking chip's dimensions …

HfO2 can assume different crystalline structures, such as monoclinic, orthorhombic, and
cubic polymorphs, each one characterized by unical properties. The peculiarities of this …

Despite the great progress of ferroelectric gated field-effect transistors (Fe-FETs) based on
graphene and other 2D materials, a device model that accurately describes the hysteretic …

HfO2 shows different polymorphs, including monoclinic and orthorhombic ones, that exhibit
singular properties. Moreover, the character of HfO2 is also influenced by the Zr atoms as a …

The paper presents the state‐of‐the art of nanoelectronic devices based on 2D materials
related to the cutting edge of Moore's law. Ballistic electron devices, ferroelectric, and …

Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS 2 thin
film (7 monolayers) grown on a 4-inch Al 2 O 3/high-resistivity silicon wafer via Chemical …

Conventional memory elements code information in the Boolean “0” and “1” form. Devices
that exceed bistability in their resistance are useful as memory for future data storage due to …

This paper is dedicated to the study of the tunable electromagnetic properties of HfO2 doped
with Zr (further referred to as HfZrO) grown on high-resistivity silicon using atomic layer …

The electronic properties of graphene on top of ferroelectric HfO2 substrates in an
orthorhombic phase with space group Pca21 are investigated using density functional …

In this work, we present a metal-insulator-metal (MIM) diode, based on quantum tunnelling
phenomena. Its model is based on a multilevel modelling approach consisting of atomistic …