Condition monitoring (CM) has already been proven to be a cost effective means of
enhancing reliability and improving customer service in power equipment, such as …

This paper proposes a synthesis of different electrical methods used to estimate the
temperature of power semiconductor devices. The following measurement methods are …

This paper discusses various types of failure mechanisms, precursor parameters, and
accelerated aging-based procedures to estimate the remaining life of power electronic …

Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …

Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the
junction temperature extraction and prediction of power semiconductor devices. In this …

Power electronic systems play an increasingly important role in providing high-efficiency
power conversion for adjustable-speed drives, power-quality correction, renewable-energy …

The measurement of the junction temperature with thermosensitive electrical parameters
(TSEPs) is largely used by electrical engineers or researchers, but the obtained temperature …

This paper examines a number of techniques for junction temperature estimation of silicon
carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive …

An electrical method for junction temperature measurement of MOS-gated power
semiconductor devices is presented. The measurement method involves detecting the peak …

Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic
device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures …