The mobility of an InGaN based two-dimensional electron gas is determined for an indium
content ranging from 0 to 20%. While the electron density remains constant at∼ 2.5× 10 13 …

In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry
(RBS) measurements allow a comprehensive characterization of Al 1− x In x N thin films …

We report the effects of the growth temperature on the structural and electrical properties of
the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray …

In dieser Arbeit wurde die technologische Realisierung von GaN-basierten HEMT-
Transistoren für die spätere Anwendung als Hochfrequenzverstärker im Frequenzbereich …

In this paper we present the comparison of a HEMT structure based on ternary to that of
quaternary AlIn (Ga) N large band gap material. Band profile simulations have been …

A rapid advancement and adoption of the light emitting diodes (LEDs) based solid state
lighting (SSL) technology is projected to reduce the annual lighting energy consumption …

Metalorganic vapor phase epitaxy (MOVPE) is one of the most hardware‐dependent
techniques in semiconductor technology. This chapter shows a block diagram of an MOVPE …

We have grown an AlIn (Ga) N/GaN heterostructure which is a promising alternative to the
AlGaN/GaN heterostructure. The mobility and the carrier concentration of the two …

This article describes the metalorganic vapor-phase epitaxy (MOVPE) of group III-nitride
materials. Emphasis is placed on the chemistry, growth mechanisms, and materials …

In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry
(RBS) measurements allow a comprehensive characterization of Al1-xInxN thin films grown …