GaN radiofrequency components and power amplifiers for next-generation 5G communications
This review article provides a thorough analysis of recent progress in Gallium Nitride radio
frequency components and power amplifiers, highlighting their essential contributions to the …
frequency components and power amplifiers, highlighting their essential contributions to the …
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
G Deshpande, S Bhattacharya, J Ajayan… - Journal of Electronic …, 2024 - Springer
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
M Jagadesh, A Karthikeyan, D Somasundaram - Microelectronics Journal, 2024 - Elsevier
Scandium aluminum nitride (Sc x Al 1-x N) is a promising material among group III nitrides,
offering outstanding polarization properties resulting in very large carrier densities. We …
offering outstanding polarization properties resulting in very large carrier densities. We …
[HTML][HTML] Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate
B Kim, SH Park - Materials, 2024 - mdpi.com
In this study, we aimed to propose an optimal structure for an AlGaN/InGaN/GaN/AlGaN/SiC
HEMT by investigating how the breakdown voltage varies with the thickness and …
HEMT by investigating how the breakdown voltage varies with the thickness and …
[HTML][HTML] Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage
B Kim, SH Park - Materials, 2024 - mdpi.com
This study investigates the effects of incorporating a CdZnO layer in place of the
conventional InGaN layer in an AlGaN/InGaN/GaN/AlGaN/SiC high-electron mobility …
conventional InGaN layer in an AlGaN/InGaN/GaN/AlGaN/SiC high-electron mobility …
[HTML][HTML] RF linearity and improved transconductance of ScAlN/GaN HEMT with novel inverse L-shaped gate structure
Z Liu, H Sun, L Yang, R Lv, Y Zhang, Y Li, Y Huang… - Results in Physics, 2024 - Elsevier
In this study, we investigate the enhancement of effective transconductance and gain
linearity in submicrometer gate AlGaN-barrier-based transistors utilizing ScAlN/GaN …
linearity in submicrometer gate AlGaN-barrier-based transistors utilizing ScAlN/GaN …
Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics
AlGaN/GaN strain relief layer high-electron mobility transistors (AG SRL HEMT) on silicon
wafers are attracting a lot of attention due to their cost effectiveness and potential for …
wafers are attracting a lot of attention due to their cost effectiveness and potential for …
Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
R Natarajan, P Murugapandiyan, N Vigneshwari… - Micro and …, 2024 - Elsevier
Abstract The AlN/GaN heterostructure on the AlGaN back barrier with different buffer layer
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …
Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs
Y Guo, Y Ren, Z Peng, X Ma, S Li, S Zheng - Micro and Nanostructures, 2024 - Elsevier
In this study, an AlGaN/GaN high electron mobility transistor with lateral inhomogeneous
AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN …
AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN …
A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model
In this work, two-dimensional electron gas of the dual material gate Fe doped
AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) device, sheet charge density …
AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) device, sheet charge density …