A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a
drain in the fin structure, a channel in the fin structure between the source and the drain, a …

A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-
layer charge storing layer and methods of forming the same are provided. Generally, the …

A process for fabricating a field-effect transistor device (20) implemented on a network of
vertical nanowires (24), includes: producing a source electrode (26) and a drain elec trode …

A method for fabricating a nonvolatile charge trap memory device is described. The method
includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer …

A semiconductor devices including non-volatile memories and methods of fabricating the
same to improve performance thereof are provided. Generally, the device includes a …

Assignee: Agency for Science, Technology and Research, Singapore (SG) According to
embodiments of the present invention, a non (21) Appl. No.: 13/860,870 volatile memory …

FET built on a silicon substrate, wherein the source, drain, and channel are vertically
aligned, on top of one another. Current flow between the source and the drain is influenced …

A memory device is described. Generally, the device includes a memory transistor and a
metal oxide semiconductor (MOS) logic transistor. The memory transistor includes: a …

(57) ABSTRACT A integrated device including a non-volatile memory (NVM) and a
nanosheet field effect transistor (FET) and a method of fabricating the device include …

(57) ABSTRACT A semiconductor device including an oxide-nitride-oxide (ONO) structure
having a multi-layer charge storing layer and methods of forming the same are provided …