Growth of 28Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD Technique
Y Liu, KP Gradwohl, CHS Lu… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Isotopically enriched 28 Si quantum well layers in SiGe/Si/SiGe heterostructures are an
excellent material platform for electron spin qubits. In this work, we report the fabrication of …
excellent material platform for electron spin qubits. In this work, we report the fabrication of …
[HTML][HTML] Compressively strained epitaxial Ge layers for quantum computing applications
The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel
material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using …
material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using …
Influence of microscope settings on dislocation imaging in transmission forescattered electron imaging (t-FSEI)
I Gutierrez-Urrutia, A Shibata - Materials Characterization, 2023 - Elsevier
This work analyzes the influence of several microscope settings, namely, sample-
forescattered electron detector (FSD) distance, and tilting conditions on the characteristics of …
forescattered electron detector (FSD) distance, and tilting conditions on the characteristics of …
Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications
M Beggiato, D Cerbu, R Loo, W Sun… - Metrology …, 2024 - spiedigitallibrary.org
Si/SiGe heterostructures are gaining traction as a starting template in applications such as
Gate-All-Around Field-Effect Transistor (GAAFET), complementary FET (CFET), and 3 …
Gate-All-Around Field-Effect Transistor (GAAFET), complementary FET (CFET), and 3 …