Synthesizing lightweight, thin–profile, and high–performance microwave absorbers has
emerged as an urgent research topic. A promising strategy for carbon–based materials to …

Abstract Ge-Sb-Te (GST) ternary alloy is the core material for phase-change memory (PCM).
Compared with Ge 2 Sb 2 Te 5 (GST-225), Ge-rich GST (GGST) has a higher crystallization …

Ge2Sb2Te5 is used in phase change memory, a nonvolatile memory technology, due to its
phase change properties. The primary advantage of phase change memory over the state-of …

Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next
generation of embedded phase change memories because of their good thermal stability …

The phase transition temperature and crystallization kinetics of phase-change materials
(PCMs) are crucial characteristics for their performance, data retention, and reliability in …

Ge‐rich GST (GGST) alloys have been shown to fulfill the tough temperature specifications
required by automotive applications. Thus, they are the most promising materials for the …

Ge‐rich Ge–Sb–Te alloy is a good candidate for future automotive applications due to its
high crystallization temperature, which allows good data retention at elevated temperatures …

Simulation of atomic redistribution in Ge–Sb–Te (GST)-based memory cells during
SET/RESET cycling is needed in order to understand GST memory cell failure and to design …

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb2Te3
tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of …

Herein, we study the crystallization of undoped and nitrogen doped amorphous GeTe thin
films (slightly rich in Ge) obtained by sputtering using substrate curvature measurements to …